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November 2013
FDD7N20TM
N-Channel UniFET TM MOSFET
200 V, 5 A, 690 m Ω
Features
? R DS(on) = 580 m Ω (Typ.) @ V GS = 10 V, I D = 2.5 A
? Low Gate Charge (Typ. 5 nC)
? Low C rss (Typ. 5 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
? LCD/LED/PDP TV
? Consumer Appliances
? Lighting
? Uninterruptible Power
? AC-DC Power Supply
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C =
25 o C
unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD7N20TM
200
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
5
3
V
A
I DM
Drain Current
- Pulsed
(Note 1)
15
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
62.5
5
4.3
4.5
43
0.34
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDD7N20TM
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.9
110
o
C/W
?2007 Fairchild Semiconductor Corporation
FDD7N20TM Rev. C1
1
www.fairchildsemi.com
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